Plasmonic Diamond Membranes for Ultrafast Silicon Vacancy Emission.

Silicon vacancy centers (SiVs) in diamond have emerged as a promising platform for quantum sciences due to their excellent photostability, minimal spectral diffusion, and substantial zero-phonon line emission. However, enhancing their slow nanosecond excited-state lifetime by coupling to optical cavities remains an outstanding challenge, as current demonstrations are limited to ∼10-fold. Here, we couple negatively charged SiVs to sub-diffraction-limited plasmonic cavities and achieve an instrument-limited ≤8 ps lifetime, corresponding to a 135-fold spontaneous emission rate enhancement and a 19-fold photoluminescence enhancement. Nanoparticles are printed on ultrathin diamond membranes on gold films which create arrays of plasmonic nanogap cavities with ultrasmall volumes. SiVs implanted at 5 and 10 nm depths are examined to elucidate surface effects on their lifetime and brightness. The interplay between cavity, implantation depth, and ultrathin diamond membranes provides insights into generating ultrafast, bright SiV emission for next-generation diamond devices.

Actively Tunable Metasurfaces via Plasmonic Nanogap Cavities with Sub-10-nm VO2 Films.

Actively tunable optical materials integrated with engineered subwavelength structures could enable novel optoelectronic devices, including reconfigurable light sources and tunable on-chip spectral filters. The phase-change material vanadium dioxide (VO2) provides a promising solid-state solution for dynamic tuning; however, previous demonstrations have been limited to thicker and often rough VO2 films or require a lattice-matched substrate for growth. Here, sub-10-nm-thick VO2 films are realized by atomic layer deposition (ALD) and integrated with plasmonic nanogap cavities to demonstrate tunable, spectrally selective absorption across 1200 nm in the near-infrared (NIR). Upon inducing the phase transition via heating, the absorption resonance is blue-shifted by as much as 60 nm. This process is reversible upon cooling and repeatable over more than ten temperature cycles. Dynamic, ultrathin VO2 films deposited by ALD, as demonstrated here, open up new potential architectures and applications where VO2 can be utilized to provide reconfigurability including three-dimensional, flexible and large-area structures.

Probing the origin of highly-efficient third-harmonic generation in plasmonic nanogaps.

Plasmonic structures can precisely localize electromagnetic energy to deep subwavelength regions resulting in significant field enhancement useful for efficient on-chip nonlinear generation. However, the origin of large nonlinear enhancements observed in plasmonic nanogap structures consisting of both dielectrics and metals is not fully understood. For the first time, here we probe the third harmonic generation (THG) from a variety of dielectric materials embedded in a nanogap plasmonic cavity. From comprehensive spectral analysis of the THG signal, we conclude that the nonlinear response results primarily from the dielectric spacer layer itself as opposed to the surrounding metal. We achieved a maximum enhancement factor of more than six orders of magnitude compared to a bare gold film, which represents a nonlinear conversion efficiency of 8.78 × 10-4%. We expect this new insight into the nonlinear response in ultrathin gaps between metals to be promising for on-chip nonlinear devices such as ultrafast optical switching and entangled photon sources.